JPH0449787B2 - - Google Patents

Info

Publication number
JPH0449787B2
JPH0449787B2 JP58198711A JP19871183A JPH0449787B2 JP H0449787 B2 JPH0449787 B2 JP H0449787B2 JP 58198711 A JP58198711 A JP 58198711A JP 19871183 A JP19871183 A JP 19871183A JP H0449787 B2 JPH0449787 B2 JP H0449787B2
Authority
JP
Japan
Prior art keywords
film
layer
sno
light
vertical register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58198711A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6089967A (ja
Inventor
Tetsuo Kumezawa
Takashi Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58198711A priority Critical patent/JPS6089967A/ja
Publication of JPS6089967A publication Critical patent/JPS6089967A/ja
Publication of JPH0449787B2 publication Critical patent/JPH0449787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP58198711A 1983-10-24 1983-10-24 光電変換素子 Granted JPS6089967A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58198711A JPS6089967A (ja) 1983-10-24 1983-10-24 光電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58198711A JPS6089967A (ja) 1983-10-24 1983-10-24 光電変換素子

Publications (2)

Publication Number Publication Date
JPS6089967A JPS6089967A (ja) 1985-05-20
JPH0449787B2 true JPH0449787B2 (en]) 1992-08-12

Family

ID=16395736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58198711A Granted JPS6089967A (ja) 1983-10-24 1983-10-24 光電変換素子

Country Status (1)

Country Link
JP (1) JPS6089967A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62239575A (ja) * 1986-04-11 1987-10-20 Fujitsu Ltd 固体撮像装置
JPS6420654A (en) * 1987-07-15 1989-01-24 Toshiba Corp Solid-state image sensing device and manufacture thereof
JPH01143345A (ja) * 1987-11-30 1989-06-05 Hamamatsu Photonics Kk 半導体集積回路装置
KR100259063B1 (ko) * 1992-06-12 2000-06-15 김영환 Ccd 영상소자
JPH0824178B2 (ja) * 1993-02-15 1996-03-06 日本電気株式会社 固体撮像装置
KR970007711B1 (ko) * 1993-05-18 1997-05-15 삼성전자 주식회사 오버-플로우 드레인(ofd)구조를 가지는 전하결합소자형 고체촬상장치

Also Published As

Publication number Publication date
JPS6089967A (ja) 1985-05-20

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